用于拉曼光谱的亚毫微秒时门控CMOS单光子雪崩二极管探测器

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044156

I. Nissinen, J. Nissinen, Antti-Kalle Lansman, L. Hallman, A. Kilpelä, Juha Kostamovaara, M. Kogler, M. Aikio, J. Tenhunen

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引用次数: 67

摘要

采用标准高压0.35 μm CMOS工艺，设计并制备了用于拉曼光谱的时间门控单光子雪崩二极管(SPAD)。sub-ns时间门控窗用于抑制拉曼研究中典型的荧光背景，也用于最小化暗计数率，以最大化拉曼信号的信噪比。将所提出的时间门控技术应用于橄榄油的拉曼光谱测量，门窗为300 ps，显示出明显的荧光抑制。

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A sub-ns time-gated CMOS single photon avalanche diode detector for Raman spectroscopy

A time-gated single photon avalanche diode (SPAD) has been designed and fabricated in a standard high voltage 0.35 μm CMOS technology for Raman spectroscopy. The sub-ns time gating window is used to suppress the fluorescence background typical of Raman studies, and also to minimize the dark count rate in order to maximize the signal-to-noise ratio of the Raman signal. The proposed time-gating technique is applied for measuring the Raman spectra of olive oil with a gate window of 300 ps, and shows significant fluorescence suppression.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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