基于粘合剂粘合和激光辅助脱粘的先进晶圆级封装临时处理技术

K. Zoschke, T. Fischer, H. Oppermann, K. Lang
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引用次数: 3

摘要

该手稿描述了先进晶圆级封装的工艺方案,该方案通过临时键合和脱键能力实现,但超出了经典薄晶圆处理方法的技能。介绍了一种胶粘接和激光辅助脱粘技术,该技术是TSV晶圆加工的成熟平台,为这些不同类型的处理场景提供了一个通用的基础。通过采用这种基础技术,单个器件可以暂时固定在载体晶圆上,随后并行处理,最终从载体晶圆上释放出来。此外,薄集成电路晶圆的工艺可以适应最终的单一薄集成电路,在其背面配备临时键合载流子,在标准的拾取和回流工艺方案中充当机械支撑。另一种工艺方案允许在晶圆级定制特定的帽结构制造,并随后从供体晶圆转移到目标晶圆。进一步的方案允许在载流子晶圆上制造薄膜多层结构并随后从这些载流子晶圆上释放。本文首先介绍了激光脱模技术粘接和脱粘的一般工艺流程。其次,对上述工艺场景的技术背景、技术动因以及技术解决方案进行了详细论述。特别关注了相应的基于粘合剂粘合和激光辅助脱粘的临时处理工艺。所有描述的工艺都在200毫米晶圆规模上得到了验证。
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Temporary handling technology for advanced wafer level packaging applications based on adhesive bonding and laser assisted de-bonding
This manuscript describes process scenarios for advanced wafer level packaging which are enabled by temporary bonding and de-bonding capabilities but exceeding the skills of classical thin wafer handling approaches. An adhesive bonding and laser assisted de-bonding technology which is a proven platform for TSV wafer processing is introduced to be a versatile basis for these different kinds of handling scenarios. By adapting this base technology, single devices can be temporary fixed at carrier wafers, subsequently processed in parallel and finally release from the carrier wafers. Furthermore, processes for thin IC wafers can be adapted to end up with singulated thin ICs equipped with temporary bonded carrier dice on their backside which act as mechanical support during a standard pick&place and reflow process scheme. Another process scenario allows the custom specific fabrication of cap structures at wafer level and subsequent transfer bonding from a donor wafer to a target wafer. A further scenario allows the fabrication of thin film multilayer structures at carrier wafers and their subsequent release from these carrier wafers. The manuscript firstly describes the general process flow for adhesive bonding and de-bonding by laser release technology. Secondly, technical back ground and motivation as well as technological solutions for the above mentioned process scenarios are presented and discussed in detail. Special focus is drawn on the corresponding temporary handling processes which are based on adhesive bonding and laser assisted de-bonding. All described processes are proven at 200 mm wafer scale.
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