用于薄膜晶体管制造的数字光刻技术

W. Wong, R. Lujan, S. Ready, M. Chabinyc, A. Arias, R. Street
{"title":"用于薄膜晶体管制造的数字光刻技术","authors":"W. Wong, R. Lujan, S. Ready, M. Chabinyc, A. Arias, R. Street","doi":"10.1109/DRC.2004.1367877","DOIUrl":null,"url":null,"abstract":"This work presents a novel digital-lithographic method, in which an electronically generated and digitally aligned etch mask is jet-printed onto a process surface. This method was used to fabricate hydrogenated amorphous silicon thin-film transistor (TFT) arrays. The digital lithographically fabricated arrays had features as small a 40 μm with 5 μm layer-to-layer registration and pixel resolution of 75 dpi over a four-inch diameter wafer. The resulting TFTs, with on/off ratios of 108 and threshold voltages of 2-3 V were then integrated with a-Si sensor media for an image sensor. The image sensor was operated as an X-ray and light detector.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Digital lithography for thin-film transistor fabrication\",\"authors\":\"W. Wong, R. Lujan, S. Ready, M. Chabinyc, A. Arias, R. Street\",\"doi\":\"10.1109/DRC.2004.1367877\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a novel digital-lithographic method, in which an electronically generated and digitally aligned etch mask is jet-printed onto a process surface. This method was used to fabricate hydrogenated amorphous silicon thin-film transistor (TFT) arrays. The digital lithographically fabricated arrays had features as small a 40 μm with 5 μm layer-to-layer registration and pixel resolution of 75 dpi over a four-inch diameter wafer. The resulting TFTs, with on/off ratios of 108 and threshold voltages of 2-3 V were then integrated with a-Si sensor media for an image sensor. The image sensor was operated as an X-ray and light detector.\",\"PeriodicalId\":385948,\"journal\":{\"name\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2004.1367877\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367877","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

这项工作提出了一种新的数字光刻方法,其中电子生成和数字对齐的蚀刻掩模被喷印到工艺表面上。利用该方法制备了氢化非晶硅薄膜晶体管阵列。采用数字光刻技术制造的阵列尺寸最小为40 μm,层对层配准精度为5 μm,在直径为4英寸的晶圆上像素分辨率为75 dpi。所得到的tft,开/关比为108,阈值电压为2-3 V,然后与用于图像传感器的a-Si传感器介质集成。图像传感器作为x射线和光探测器进行操作。
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Digital lithography for thin-film transistor fabrication
This work presents a novel digital-lithographic method, in which an electronically generated and digitally aligned etch mask is jet-printed onto a process surface. This method was used to fabricate hydrogenated amorphous silicon thin-film transistor (TFT) arrays. The digital lithographically fabricated arrays had features as small a 40 μm with 5 μm layer-to-layer registration and pixel resolution of 75 dpi over a four-inch diameter wafer. The resulting TFTs, with on/off ratios of 108 and threshold voltages of 2-3 V were then integrated with a-Si sensor media for an image sensor. The image sensor was operated as an X-ray and light detector.
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