电子束抽运紫外发光器件中碳纳米管纳米冷阴极阵列的优化研究

Lei Luo, Yan Shen, Dong Han, Xiaoyu Qin, Junzhong Liang, Baohong Li, Yu Zhang, S. Deng
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引用次数: 0

摘要

电子束抽运的超宽带隙半导体发光是实现高性能深紫外源器件的一种可行策略。本研究通过优化eb泵浦DUV器件中碳纳米管(CNTs)纳米冷阴极阵列,提高了阴极电子发射效率,进而提高了发光强度。将碳纳米管设计成不同的几何形状和排列方式,然后采用高能激光刻蚀法制备碳纳米管。将优化后的CNTs阵列转移到冷阴极后,其场发射性能得到了改善,从而进一步提高了CNTs作为激发源时DUV光源器件的发光性能。
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Study on Optimazation of Carbon Nanotube Nano-Cold Cathode Array for an Electron Beam Pumping Ultraviolet Light Emitting Device
Ultrawide bandgap (UWBG) semiconductor luminescence pumped by electron beam (EB) is a feasible strategy to achieve high-performance deep ultraviolet (DUV) source device. In this study, by optimizing the carbon nanotubes (CNTs) nano-cold cathode array in a proposed EB-pumped DUV device, we achieved enhanced cathode electron emission efficiency and then improved the light emitting intensity. The CNTs were designed into different geometric patterns and arrangements, and then were fabricated out by a high energy laser etching method. After transferred onto the cold cathode, the field emission properties of the optimized CNTs array were demonstrated to be improved, thus will further improve the luminescence performance of the DUV light source device when the CNTs act as an excitation source.
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