F. L. Khir, M. Myers, A. Podolska, M. Baker, B. Nener, G. Parish
{"title":"基于AlGaN/ gan的硝酸盐传感器优化研究","authors":"F. L. Khir, M. Myers, A. Podolska, M. Baker, B. Nener, G. Parish","doi":"10.1109/COMMAD.2012.6472411","DOIUrl":null,"url":null,"abstract":"AlGaN/GaN HEMT (high electron mobility transistor) sensors have been coated with a nitrate selective polymer membrane enabling nitrate ion sensing in water. In this study we optimise the thickness of the nitrate selective membrane to maximise sensor performance (sensitivity).","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimisation studies for AlGaN/GaN-based nitrate sensors\",\"authors\":\"F. L. Khir, M. Myers, A. Podolska, M. Baker, B. Nener, G. Parish\",\"doi\":\"10.1109/COMMAD.2012.6472411\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaN/GaN HEMT (high electron mobility transistor) sensors have been coated with a nitrate selective polymer membrane enabling nitrate ion sensing in water. In this study we optimise the thickness of the nitrate selective membrane to maximise sensor performance (sensitivity).\",\"PeriodicalId\":136573,\"journal\":{\"name\":\"COMMAD 2012\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COMMAD 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2012.6472411\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472411","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimisation studies for AlGaN/GaN-based nitrate sensors
AlGaN/GaN HEMT (high electron mobility transistor) sensors have been coated with a nitrate selective polymer membrane enabling nitrate ion sensing in water. In this study we optimise the thickness of the nitrate selective membrane to maximise sensor performance (sensitivity).
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
