一个105 db SNDR, 10 kSps的多电平二阶增量转换器,智能dem功耗280µW, 3.3 v电源

Yao Liu, E. Bonizzoni, Alessandro D'Amato, F. Maloberti
{"title":"一个105 db SNDR, 10 kSps的多电平二阶增量转换器,智能dem功耗280µW, 3.3 v电源","authors":"Yao Liu, E. Bonizzoni, Alessandro D'Amato, F. Maloberti","doi":"10.1109/ESSCIRC.2013.6649150","DOIUrl":null,"url":null,"abstract":"This paper presents a second-order 3-bit incremental converter, which uses a novel Smart-DEM algorithm for mismatch compensation of multi-level DAC unity elements. The circuit, fabricated in a mixed 0.18-0.5-μm CMOS technology, achieves more than 17-bit resolution over a 5-kHz bandwidth using 256 clock periods. A single-step chopping of the input stage leads to a residual offset of 9.7 μV. The measured SFDR and power consumption are -90 dB and 280 μW, respectively. The achieved Figure of Merit is 177.5 dB.","PeriodicalId":183620,"journal":{"name":"2013 Proceedings of the ESSCIRC (ESSCIRC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"A 105-dB SNDR, 10 kSps multi-level second-order incremental converter with smart-DEM consuming 280 µW and 3.3-V supply\",\"authors\":\"Yao Liu, E. Bonizzoni, Alessandro D'Amato, F. Maloberti\",\"doi\":\"10.1109/ESSCIRC.2013.6649150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a second-order 3-bit incremental converter, which uses a novel Smart-DEM algorithm for mismatch compensation of multi-level DAC unity elements. The circuit, fabricated in a mixed 0.18-0.5-μm CMOS technology, achieves more than 17-bit resolution over a 5-kHz bandwidth using 256 clock periods. A single-step chopping of the input stage leads to a residual offset of 9.7 μV. The measured SFDR and power consumption are -90 dB and 280 μW, respectively. The achieved Figure of Merit is 177.5 dB.\",\"PeriodicalId\":183620,\"journal\":{\"name\":\"2013 Proceedings of the ESSCIRC (ESSCIRC)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Proceedings of the ESSCIRC (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2013.6649150\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2013.6649150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25

摘要

本文提出了一种二阶3位增量变换器,该变换器采用一种新颖的Smart-DEM算法对多级DAC单元元进行失配补偿。该电路采用混合0.18-0.5 μm CMOS技术制造,在5khz带宽下使用256时钟周期实现超过17位的分辨率。输入级的单步斩波导致9.7 μV的剩余偏置。测量的SFDR和功耗分别为-90 dB和280 μW。达到的优值系数为177.5 dB。
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A 105-dB SNDR, 10 kSps multi-level second-order incremental converter with smart-DEM consuming 280 µW and 3.3-V supply
This paper presents a second-order 3-bit incremental converter, which uses a novel Smart-DEM algorithm for mismatch compensation of multi-level DAC unity elements. The circuit, fabricated in a mixed 0.18-0.5-μm CMOS technology, achieves more than 17-bit resolution over a 5-kHz bandwidth using 256 clock periods. A single-step chopping of the input stage leads to a residual offset of 9.7 μV. The measured SFDR and power consumption are -90 dB and 280 μW, respectively. The achieved Figure of Merit is 177.5 dB.
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