研究MESFET高效工作的改进栅极击穿模型

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303114

T. Winslow, A. Morris, R. Trew

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引用次数: 6

摘要

提出了mesfet的栅极击穿模型。该模型基于量子隧穿引发的雪崩电离。击穿模型被纳入到基于物理的MESFET模型中。正向和反向门导是决定MESFET放大器功率和效率的主要因素。

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An improved gate breakdown model for studying high efficiency MESFET operation

A gate breakdown model for MESFETs is presented. The model is based on quantum tunneling initiated avalanche ionization. The breakdown model is incorporated into a physics based MESFET model. Forward and reverse gate conduction an shown to be the main factors in determining the power and efficiency of MESFET amplifiers.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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