Efficient Two-Band based Non-Equilibrium Green's Function Scheme for Modeling Tunneling Nano-Devices

In this work, we introduce a novel procedure to compute the direct band-to-band tunneling in semiconductor nano-devices by combining the effective mass approximation, the non-equilibrium Greens function technique, and the two-band Flietner model of the imaginary dispersion. The model is first tested on a Si-InAs nanowire p-type tunnel field-effect transistor (p-TFET), showing great accuracy at much less computational cost when compared with atomistic simulations. Secondly, we report a preliminary quantum transport simulation study of the impact of random discrete dopants on Si-InAs nanowire p-TFETs. An ensemble of 63 InAs-Si nanowire TFETs has been simulated, revealing a strong dopant-induced variability.