Submicron InP/InGaAs composite channel MOSFETs with selectively regrown N+-source/drain buried in channel undercut

We demonstrated a high-mobility InP 5 nm/InGaAs 12 nm composite channel MOSFET with MOVPE regrown n⁺-source/drain region for low series resistance and high source injection current. A gate dielectric was SiO2 and thickness was 20 nm. A carrier density of regrown InGaAs source/drain layer was over 4 × 10¹⁹ cm⁻³. In the measurement of submicron (= 150 nm) device, the drain current was 0.93 mA/µm at Vg = 3 V, Vd = 1 V and the peak transconductance was 0.53 mS/µm at Vd = 0.65 V, respectively. The channel length dependence of transconductance indicated the good relativity.