N. Yoshioka, A. Heya, Naoto Matuo, Yousuke Nakamura, Gakuhiko Yokomori, M. Yoshioka, K. Kohama, Kazuhiro Ito
{"title":"闪光灯熔覆法在SiOx中形成nc-Si","authors":"N. Yoshioka, A. Heya, Naoto Matuo, Yousuke Nakamura, Gakuhiko Yokomori, M. Yoshioka, K. Kohama, Kazuhiro Ito","doi":"10.1109/AM-FPD.2016.7543661","DOIUrl":null,"url":null,"abstract":"The formation of nanocrystal silicon (nc-Si) in SiOx is one of the key technologies for the realization of high-quality solar cells. The SiOx films were deposited on a quartz substrate by a reactive sputtering. The Si/O ratio of the SiOx films were changed from 0.56 to 2.07. The nc-Si in SiOx film was characterized by Raman scattering spectroscopy. The Crystalline fractions of all samples after FLA were almost 100%. The size of nc-Si was estimated to 9 nm by Raman peak position. It is shown that the grain size of nc-Si was not changed by the Si/O ratio. On the other hand, the full width at half maximum (FWHM) of Raman peak due to crystal phase was changed by the Si/O ratio of SiOx film.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Formation of nc-Si in SiOx by flash lamp anneling\",\"authors\":\"N. Yoshioka, A. Heya, Naoto Matuo, Yousuke Nakamura, Gakuhiko Yokomori, M. Yoshioka, K. Kohama, Kazuhiro Ito\",\"doi\":\"10.1109/AM-FPD.2016.7543661\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The formation of nanocrystal silicon (nc-Si) in SiOx is one of the key technologies for the realization of high-quality solar cells. The SiOx films were deposited on a quartz substrate by a reactive sputtering. The Si/O ratio of the SiOx films were changed from 0.56 to 2.07. The nc-Si in SiOx film was characterized by Raman scattering spectroscopy. The Crystalline fractions of all samples after FLA were almost 100%. The size of nc-Si was estimated to 9 nm by Raman peak position. It is shown that the grain size of nc-Si was not changed by the Si/O ratio. On the other hand, the full width at half maximum (FWHM) of Raman peak due to crystal phase was changed by the Si/O ratio of SiOx film.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543661\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The formation of nanocrystal silicon (nc-Si) in SiOx is one of the key technologies for the realization of high-quality solar cells. The SiOx films were deposited on a quartz substrate by a reactive sputtering. The Si/O ratio of the SiOx films were changed from 0.56 to 2.07. The nc-Si in SiOx film was characterized by Raman scattering spectroscopy. The Crystalline fractions of all samples after FLA were almost 100%. The size of nc-Si was estimated to 9 nm by Raman peak position. It is shown that the grain size of nc-Si was not changed by the Si/O ratio. On the other hand, the full width at half maximum (FWHM) of Raman peak due to crystal phase was changed by the Si/O ratio of SiOx film.
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