{"title":"焊料凸起处的电迁移:平均失效时间TCAD研究","authors":"H. Ceric, W. Zisser, M. Rovitto, S. Selberherr","doi":"10.1109/SISPAD.2014.6931603","DOIUrl":null,"url":null,"abstract":"The mechanical and electrical properties of solder bumps influence the overall reliability of 3D ICs. A characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation is enhanced by electromigration and leads to the formation of voids which can cause a complete failure of a solder bump. In this paper we present a compact model for prediction of the mean-time-to-failure of solder bumps under the influence of electromigration.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electromigration in solder bumps: A mean-time-to-failure TCAD study\",\"authors\":\"H. Ceric, W. Zisser, M. Rovitto, S. Selberherr\",\"doi\":\"10.1109/SISPAD.2014.6931603\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mechanical and electrical properties of solder bumps influence the overall reliability of 3D ICs. A characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation is enhanced by electromigration and leads to the formation of voids which can cause a complete failure of a solder bump. In this paper we present a compact model for prediction of the mean-time-to-failure of solder bumps under the influence of electromigration.\",\"PeriodicalId\":101858,\"journal\":{\"name\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2014.6931603\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931603","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electromigration in solder bumps: A mean-time-to-failure TCAD study
The mechanical and electrical properties of solder bumps influence the overall reliability of 3D ICs. A characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation is enhanced by electromigration and leads to the formation of voids which can cause a complete failure of a solder bump. In this paper we present a compact model for prediction of the mean-time-to-failure of solder bumps under the influence of electromigration.
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