{"title":"CMOS直接下变频器中IIP2的分析与优化","authors":"D. Manstretta, F. Svelto","doi":"10.1109/CICC.2002.1012805","DOIUrl":null,"url":null,"abstract":"Two mechanisms are responsible for second order intermodulation in CMOS down-converters: RF self-mixing and device non-linearity and mismatches. An intuitive model and analytical expressions are provided for both of them. A down-converter prototype, drawing 3.2 mA from a 1.8 V supply, part of a fully integrated 0.18 /spl mu/m CMOS UMTS receiver front-end shows 66 dBm IIP2 and 16 dBm IIP3.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Analysis and optimization of IIP2 in CMOS direct down-converters\",\"authors\":\"D. Manstretta, F. Svelto\",\"doi\":\"10.1109/CICC.2002.1012805\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two mechanisms are responsible for second order intermodulation in CMOS down-converters: RF self-mixing and device non-linearity and mismatches. An intuitive model and analytical expressions are provided for both of them. A down-converter prototype, drawing 3.2 mA from a 1.8 V supply, part of a fully integrated 0.18 /spl mu/m CMOS UMTS receiver front-end shows 66 dBm IIP2 and 16 dBm IIP3.\",\"PeriodicalId\":209025,\"journal\":{\"name\":\"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2002.1012805\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2002.1012805","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis and optimization of IIP2 in CMOS direct down-converters
Two mechanisms are responsible for second order intermodulation in CMOS down-converters: RF self-mixing and device non-linearity and mismatches. An intuitive model and analytical expressions are provided for both of them. A down-converter prototype, drawing 3.2 mA from a 1.8 V supply, part of a fully integrated 0.18 /spl mu/m CMOS UMTS receiver front-end shows 66 dBm IIP2 and 16 dBm IIP3.