{"title":"ZnCdHgTe薄膜及ZnCdHgTe基异质结构参数的数值模拟","authors":"G. Khlyap, P. Sydorchuk","doi":"10.1109/ASDAM.2002.1088485","DOIUrl":null,"url":null,"abstract":"Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"274 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures\",\"authors\":\"G. Khlyap, P. Sydorchuk\",\"doi\":\"10.1109/ASDAM.2002.1088485\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"274 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088485\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures
Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.
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