双离子束溅射制备具有记忆阻性的纳米ZnO RRAM

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2018-07-01 DOI:10.1109/NANO.2018.8626226

Amitesh Kumar, Mangal Das, Biswajit Mandal, R. Bhardwaj, Aaryashree, A. Kranti, S. Mukherjee

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摘要

本文报道了双离子束溅射(DIBS)制备的ZnO基薄膜具有高耐用性和保持性的无形成(FF)电阻开关(RS)。无掺杂和Ga-doped氧化锌薄膜用于比较掺杂在RS行为的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering

This work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior.

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2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

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