硅衬底体积内通过扩散曲线的建模

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI:10.1109/EDM.2009.5173925

G. V. Perov, Dmitry O. Kusnetsov

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引用次数: 0

摘要

建立了考虑掺杂在硅衬底的界面上的偏析，考虑掺杂在硅衬底的平面侧和非平面侧的有限源扩散的一维模型。定义了在硅衬底深度控制轮廓参数的条件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of through diffusion profile in the volume of silicon substrate

1-D model of doping diffusion in silicon from limited source on planar and non-planar side of silicon substrate with taking into attention the segregation of doping on the interface with blocking oxide is developed. A conditions for controlling the parameters of profiles in the depth of the silicon substrate is defined.

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2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices

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