用于激光发射的高q因子InP光子晶体纳米束腔

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880516

G. Crosnier, A. Bazin, P. Monnier, S. Bouchoule, R. Braive, G. Beaudoin, I. Sagnes, R. Raj, F. Raineri

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引用次数: 2

摘要

通过改进ICP刻蚀，证明了高q因子inp基光子晶体纳米束腔的制备。通过将其集成到SOI线波导上，我们测量了无源腔的q因子高达~130,000。利用该技术可获得低激光阈值的纳米激光器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High Q-factor InP Photonic Crystal nanobeam cavities for laser emission

Fabrication of high Q-factor InP-based Photonic Crystal nanobeam cavities is demonstrated by improving ICP etching. We measure Q-factors as high as ~130,000 for passive cavities by integrating them on to SOI wire waveguides. Nanolasers exhibiting low lasing threshold are then obtained using this technology.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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