印刷电路板上倒装芯片封装中电力输送网络的阻抗特性

Low Suat-Mooi, Guo Fei, Wong Wui-Weng
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引用次数: 1

摘要

本文讨论了在当今高性能数字系统中用于输电网络(PDN)的低阻抗表征技术。更重要的是,通过灵敏度分析研究了矢量网络分析仪(VNA)测量S21时,测量精度对探针在倒装封装上的着落位置的影响,特别是对两个微探针之间相对距离的影响。从大约直流到GHz频率范围的宽带宽上的毫欧阻抗可以精确测量,并且与安装在印刷电路板(PCB)上的微处理器微型PGA衬底上的模拟数据具有良好的相关性,该衬底采用了尖端的电容去耦方案设计。传统上,通过双端口VNA测量获得的传输阻抗用于PDN表征。在复杂的封装和电路板设计中,由于测试点的可达性,两个微探头紧密地落在C4衬垫上会产生电感耦合引起的不必要的测量噪声,而两个微探头之间的距离过大则会导致封装功率平面寄生电感引起的人为低阻抗。在感兴趣频率范围内对PDN的低阻抗特性进行表征时,测量中探测方案的谨慎安排以模拟端口设置是至关重要的。通过分析计算和仿真验证了该低阻抗特性在优化探测位置下的准确性
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Impedance Characterization of Power Delivery Network in a Flip Chip Package on a Printed Circuit Board
This paper discusses low impedance characterization techniques used for power delivery network (PDN) in today's high-performance digital systems. More importantly, sensitivity analysis is presented to study impact of measurement accuracy against landing locations of probes onto a flip chip package and more specifically relative distance between two micro-probes in S21 measurements by vector network analyzer (VNA). Milliohms impedances across wide bandwidth, from approximately DC to GHz frequency range, can be measured accurately and well-correlated with simulation data on a microprocessor micro PGA substrate sitting in a socket mounted onto a printed circuit board (PCB) with cutting edge design of capacitive decoupling scheme. Conventionally, transfer-impedance obtained by two-port VNA measurement is used for PDN characterization. Being challenged by accessibility of test points in a complex package and board design, closely landing of the two micro-probes onto C4 pads would induce unwanted measurement noise caused by inductive coupling while excessive distance between the two micro-probes would result into artificial low impedance caused by parasitic inductance in the power planes of the package. Cautious arrangement of probing scheme in measurement that mimic to port setting in simulation is crucial in low impedance characterization of PDN at frequency range of interested. The accuracy of this low impedance characterization with optimized probing locations is verified by analytic calculation and simulation
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