Investigation and Simulation of the Effect of Laser Heating on Wafers from Different Material

In this paper, a 3D COMSOL model of a silicon wafer that is heated using a laser moving radially across the wafer surface is implemented. By modelling the incident heat flux from the laser as a spatially distributed heat source on the surface, the transient thermal response of the wafer is obtained. The average, maximum, and minimum temperatures, as well as the peak temperature difference across the substrate, are stored at each calculation step. The temperature distribution throughout the pad is stored at a specified number of output time steps. The study included three wafer models of different materials, silicon, germanium and gallium arsenide, and the results were compared and analysed in order to verify the studied characteristics.