{"title":"Si/sub -x/ Ge/sub - 1-x/组分和温度依赖性的拉曼光谱","authors":"M. Lorenc, J. Šik","doi":"10.1109/ASDAM.2002.1088486","DOIUrl":null,"url":null,"abstract":"Raman spectroscopy is employed to study the compositional and temperature dependence of optical phonon modes in Si/sub x/Ge/sub 1-x/(0.0037/spl les/./spl times//spl les/1) alloy. Czochralski grown samples are doped in the range from nominally undoped to heavily boron doped, with the highest concentration of free holes of 10/sup 20/ cm/sup -3/. Three observed bands can be attributed to local Si-Si, Ge-Ge and Si-Ge vibrational modes. We present compositional dependence and temperature shift of the Si-Si band.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Raman spectroscopy of Si/sub x/Ge/sub 1-x/ compositional and temperature dependence\",\"authors\":\"M. Lorenc, J. Šik\",\"doi\":\"10.1109/ASDAM.2002.1088486\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Raman spectroscopy is employed to study the compositional and temperature dependence of optical phonon modes in Si/sub x/Ge/sub 1-x/(0.0037/spl les/./spl times//spl les/1) alloy. Czochralski grown samples are doped in the range from nominally undoped to heavily boron doped, with the highest concentration of free holes of 10/sup 20/ cm/sup -3/. Three observed bands can be attributed to local Si-Si, Ge-Ge and Si-Ge vibrational modes. We present compositional dependence and temperature shift of the Si-Si band.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088486\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Raman spectroscopy of Si/sub x/Ge/sub 1-x/ compositional and temperature dependence
Raman spectroscopy is employed to study the compositional and temperature dependence of optical phonon modes in Si/sub x/Ge/sub 1-x/(0.0037/spl les/./spl times//spl les/1) alloy. Czochralski grown samples are doped in the range from nominally undoped to heavily boron doped, with the highest concentration of free holes of 10/sup 20/ cm/sup -3/. Three observed bands can be attributed to local Si-Si, Ge-Ge and Si-Ge vibrational modes. We present compositional dependence and temperature shift of the Si-Si band.
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