Role of Body Effect on Threshold Voltage of Strained $\mathrm{Si}-\mathrm{Si}_{\mathrm{X}}\mathrm{Ge}_{1-\mathrm{X}}$ MOSFET

Role of body effect coefficient on threshold voltage of strained Si/SiGe MOSFET is analytically investigated. Effect of dielectric thickness, doping concentration and dielectric material are computed on the threshold condition both in presence and absence of body effect. Simulation findings reveal that introduction of strained material in otherwise ideal structure enhances carrier mobility which, in turn, reduces threshold voltage. Sharp peak is observed when body effect is taken into account for a particular heterostructure composition due to enhancement of tunneling probability which decrease of barrier potential, and thus carrier flow is augmented. A few results for n-channel MOSFET are also represented to further justify the importance of novelty of the paper. Result also suggests that higher doping or thicker dielectric region leads to depletion mode of operation. An optimized design criterion is evaluated for the minimum threshold under inversion condition.