具有多个互连层的GaAs衬底上的高性能InP mHEMTs

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516006

W. Ha, Z. Griffith, Daehyun Kim, Peter Chen, M. Urteaga, B. Brar

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引用次数: 5

摘要

我们报道了一种具有InAs复合通道设计和三个互连金属层的高性能变形InP高电子迁移率晶体管(mhemt)，适用于先进的射频和混合信号集成电路。未钝化的35nm Lg器件显示出533 GHz fτ和343 GHz fmax的射频性能值。经过全电路处理，封装在BCB中，35nm Lg, 2×20um Wg mHEMT显示387GHz fτ， 580GHz fmax。四英寸晶圆映射显示出优异的器件均匀性和良率。我们还报道了一种宽带(206-294GHz) 3级G- h波段共源放大器，其标称S21中带增益为11-16dB，采用薄膜微带布线。

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High performance InP mHEMTs on GaAs substrate with multiple interconnect layers

We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35nm Lg device showed RF figures-of-merit of 533 GHz fτ and 343 GHz fmax. After full circuit processing, encapsulated in BCB, a 35nm Lg, 2×20um Wg mHEMT showed 387GHz fτ, 580GHz fmax. Four-inch wafer mapping shows excellent device uniformity and yield. We also report a broadband (206–294GHz) 3-stage G-, H-band common-source amplifier having a nominal S21 mid-band gain of 11–16dB employing thin-film microstrip wiring.

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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