X. Ding, G. Niu, H. Zhang, W. Wang, K. Imura, F. Dai
{"title":"非导电射频和直流热载流子应力对射频功率放大器FinFET可靠性的影响","authors":"X. Ding, G. Niu, H. Zhang, W. Wang, K. Imura, F. Dai","doi":"10.1109/RFIC54546.2022.9863173","DOIUrl":null,"url":null,"abstract":"Impact of non-conducting RF and DC stresses on transistor I-V and RF characteristics are investigated experimentally on a production 14/16-nm FinFET technology for the first time, for high voltage devices commonly used in RF PAs. The degradation is shown to be non-quasi static (NQS), and does not permit the use of DC stress to predict device lifetime under RF stress. Further modeling shows that these FinFETs provide enough margins against non-conducting RF stress for intended PA application.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Impact of non-Conducting RF and DC Hot Carrier Stresses on FinFET Reliability for RF Power Amplifiers\",\"authors\":\"X. Ding, G. Niu, H. Zhang, W. Wang, K. Imura, F. Dai\",\"doi\":\"10.1109/RFIC54546.2022.9863173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Impact of non-conducting RF and DC stresses on transistor I-V and RF characteristics are investigated experimentally on a production 14/16-nm FinFET technology for the first time, for high voltage devices commonly used in RF PAs. The degradation is shown to be non-quasi static (NQS), and does not permit the use of DC stress to predict device lifetime under RF stress. Further modeling shows that these FinFETs provide enough margins against non-conducting RF stress for intended PA application.\",\"PeriodicalId\":415294,\"journal\":{\"name\":\"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"97 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC54546.2022.9863173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC54546.2022.9863173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of non-Conducting RF and DC Hot Carrier Stresses on FinFET Reliability for RF Power Amplifiers
Impact of non-conducting RF and DC stresses on transistor I-V and RF characteristics are investigated experimentally on a production 14/16-nm FinFET technology for the first time, for high voltage devices commonly used in RF PAs. The degradation is shown to be non-quasi static (NQS), and does not permit the use of DC stress to predict device lifetime under RF stress. Further modeling shows that these FinFETs provide enough margins against non-conducting RF stress for intended PA application.
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