{"title":"全带蒙特卡罗模拟抑制口袋植入nMOSFET热载子效应的研究","authors":"T. Tanaka, S. Yamaguchi, K. Sukegawa, H. Goto","doi":"10.1109/IWCE.1998.742750","DOIUrl":null,"url":null,"abstract":"We have clarified two dimensional hot carrier (HC) properties of pocket implanted nMOSFETs by full band Monte Carlo device simulation, and we have shown that the HC generation can be suppressed, keeping better V/sub th/ roll-off, without deterioration of driving capability by properly choosing the pocket implant tilt angle. We have also confirmed this by measurements of gate and substrate currents and device lifetime of sub-quarter micron nMOSFETs.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation to suppress hot carrier effect in pocket-implanted nMOSFET by full band Monte Carlo simulation\",\"authors\":\"T. Tanaka, S. Yamaguchi, K. Sukegawa, H. Goto\",\"doi\":\"10.1109/IWCE.1998.742750\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have clarified two dimensional hot carrier (HC) properties of pocket implanted nMOSFETs by full band Monte Carlo device simulation, and we have shown that the HC generation can be suppressed, keeping better V/sub th/ roll-off, without deterioration of driving capability by properly choosing the pocket implant tilt angle. We have also confirmed this by measurements of gate and substrate currents and device lifetime of sub-quarter micron nMOSFETs.\",\"PeriodicalId\":357304,\"journal\":{\"name\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.1998.742750\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.1998.742750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation to suppress hot carrier effect in pocket-implanted nMOSFET by full band Monte Carlo simulation
We have clarified two dimensional hot carrier (HC) properties of pocket implanted nMOSFETs by full band Monte Carlo device simulation, and we have shown that the HC generation can be suppressed, keeping better V/sub th/ roll-off, without deterioration of driving capability by properly choosing the pocket implant tilt angle. We have also confirmed this by measurements of gate and substrate currents and device lifetime of sub-quarter micron nMOSFETs.
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