{"title":"应变条件下柔性a-IGZO TFT的电稳定性","authors":"M. Hasan, M. Billah, Jin Jang","doi":"10.1109/AM-FPD.2016.7543660","DOIUrl":null,"url":null,"abstract":"We report the effect of tensile strain on the electrical performance of flexible a-In-Ga-Z-O (a-IGZO) thin-film transistor (TFT). Positive bias stress (PBS) measurement with Vgs = 20 V and Vds = 0 V in a-IGZO TFTs show positive transfer shift due to the trapping of negative charges, likely electron trapping. We observed that tensile strained TFT with 2 mm bending radius exhibits a positive ΔVTh (V) ~2.3 V shift compared to flat condition TFT (ΔVth (V) ~1.5 V) after 3.6K seconds stress. It clearly revels that more charges are trapped at the gate insulator/a-IGZO interface when the Fermi level is shifted downward by PBS with strained geometry.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical stability of flexible a-IGZO TFT under strained condition\",\"authors\":\"M. Hasan, M. Billah, Jin Jang\",\"doi\":\"10.1109/AM-FPD.2016.7543660\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the effect of tensile strain on the electrical performance of flexible a-In-Ga-Z-O (a-IGZO) thin-film transistor (TFT). Positive bias stress (PBS) measurement with Vgs = 20 V and Vds = 0 V in a-IGZO TFTs show positive transfer shift due to the trapping of negative charges, likely electron trapping. We observed that tensile strained TFT with 2 mm bending radius exhibits a positive ΔVTh (V) ~2.3 V shift compared to flat condition TFT (ΔVth (V) ~1.5 V) after 3.6K seconds stress. It clearly revels that more charges are trapped at the gate insulator/a-IGZO interface when the Fermi level is shifted downward by PBS with strained geometry.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543660\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical stability of flexible a-IGZO TFT under strained condition
We report the effect of tensile strain on the electrical performance of flexible a-In-Ga-Z-O (a-IGZO) thin-film transistor (TFT). Positive bias stress (PBS) measurement with Vgs = 20 V and Vds = 0 V in a-IGZO TFTs show positive transfer shift due to the trapping of negative charges, likely electron trapping. We observed that tensile strained TFT with 2 mm bending radius exhibits a positive ΔVTh (V) ~2.3 V shift compared to flat condition TFT (ΔVth (V) ~1.5 V) after 3.6K seconds stress. It clearly revels that more charges are trapped at the gate insulator/a-IGZO interface when the Fermi level is shifted downward by PBS with strained geometry.
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