The novel materials for pattern growing on EUV resists

Extreme ultraviolet lithography (EUVL) technology is one of the promising high volume manufacturing processes for devices below 7nm. However, the technology still has several issues for HVM. Especially, RLS (Resolution, LWR, and sensitivity) trade-off remains as one of the obvious problems for resist patterning. In which, resist resolution is one of the challenges to make fine pattern. For fine patterning, High NA EUV is predicted as one of candidate for enabling the future generation of device manufacturing. In this situation, investigation of chemically amplified resist (CAR) is being intensively conducted as one of candidate material for high-NA EUVL. However, CAR has one of key challenge for mask transfer because it is expected that thin resist film thickness is applied to exhibit good lithographic performance. As one of the solutions for this issue, we focused on the novel material which selectively makes a growth of the pattern.