{"title":"钙钛矿/p型晶体硅串联太阳能电池","authors":"H. Kanda, A. Uzum, H. Nishino, S. Ito","doi":"10.1109/AM-FPD.2016.7543683","DOIUrl":null,"url":null,"abstract":"In order to combine perovskite solar cell and crystal silicon solar cell, indium tin oxide as conductive layer is utilized in terms of high transparency. However, distortion of I-V curve was observed by spattering conductive layer on organic hole transport material layer (Spiro-OMeTAD). In order to analyze and find out the reason of the distortion of I-V curve, perovskite solar cell was fabricated with conductive layer deposited by spattering on the hole transport material changing spattering time. It was turned out that distortion of I-V curve was increased with increase of spattering time and different diode factor was observed by measuring dark I-V curve, which attribute to the distortion of I-V curve.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Perovskite/p-type crystal silicon tandem solar cells\",\"authors\":\"H. Kanda, A. Uzum, H. Nishino, S. Ito\",\"doi\":\"10.1109/AM-FPD.2016.7543683\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to combine perovskite solar cell and crystal silicon solar cell, indium tin oxide as conductive layer is utilized in terms of high transparency. However, distortion of I-V curve was observed by spattering conductive layer on organic hole transport material layer (Spiro-OMeTAD). In order to analyze and find out the reason of the distortion of I-V curve, perovskite solar cell was fabricated with conductive layer deposited by spattering on the hole transport material changing spattering time. It was turned out that distortion of I-V curve was increased with increase of spattering time and different diode factor was observed by measuring dark I-V curve, which attribute to the distortion of I-V curve.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543683\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Perovskite/p-type crystal silicon tandem solar cells
In order to combine perovskite solar cell and crystal silicon solar cell, indium tin oxide as conductive layer is utilized in terms of high transparency. However, distortion of I-V curve was observed by spattering conductive layer on organic hole transport material layer (Spiro-OMeTAD). In order to analyze and find out the reason of the distortion of I-V curve, perovskite solar cell was fabricated with conductive layer deposited by spattering on the hole transport material changing spattering time. It was turned out that distortion of I-V curve was increased with increase of spattering time and different diode factor was observed by measuring dark I-V curve, which attribute to the distortion of I-V curve.