{"title":"基于3μm LTPS-TFT技术的CBSC二阶σ - δ调制器","authors":"Wei-Ming Lin, C. Lin, Shen-Iuan Liu","doi":"10.1109/ASSCC.2009.5357196","DOIUrl":null,"url":null,"abstract":"A second-order sigma-delta modulator has been implemented in 3μm low-temperature poly-silicon thin-film transistor (LTPS-TFT) technology. Since the LTPS-TFT operational amplifier has a low open-loop gain, a large offset voltage, and the poor linearity, the proposed comparator-based switched-capacitor integrator with correlated double sampling is adopted in the modulator. The whole modulator consumes 63.3mW from an 11.2V supply and occupies 26mm2 area. In a signal bandwidth of 1.56kHz for the touch panel application, the measured input dynamic range is 69dB and the measured peak signal-to-noise plus distortion ratio is 65.63dB with the duty-cycle control technique.","PeriodicalId":263023,"journal":{"name":"2009 IEEE Asian Solid-State Circuits Conference","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A CBSC second-order sigma-delta modulator in 3μm LTPS-TFT technology\",\"authors\":\"Wei-Ming Lin, C. Lin, Shen-Iuan Liu\",\"doi\":\"10.1109/ASSCC.2009.5357196\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A second-order sigma-delta modulator has been implemented in 3μm low-temperature poly-silicon thin-film transistor (LTPS-TFT) technology. Since the LTPS-TFT operational amplifier has a low open-loop gain, a large offset voltage, and the poor linearity, the proposed comparator-based switched-capacitor integrator with correlated double sampling is adopted in the modulator. The whole modulator consumes 63.3mW from an 11.2V supply and occupies 26mm2 area. In a signal bandwidth of 1.56kHz for the touch panel application, the measured input dynamic range is 69dB and the measured peak signal-to-noise plus distortion ratio is 65.63dB with the duty-cycle control technique.\",\"PeriodicalId\":263023,\"journal\":{\"name\":\"2009 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2009.5357196\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2009.5357196","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CBSC second-order sigma-delta modulator in 3μm LTPS-TFT technology
A second-order sigma-delta modulator has been implemented in 3μm low-temperature poly-silicon thin-film transistor (LTPS-TFT) technology. Since the LTPS-TFT operational amplifier has a low open-loop gain, a large offset voltage, and the poor linearity, the proposed comparator-based switched-capacitor integrator with correlated double sampling is adopted in the modulator. The whole modulator consumes 63.3mW from an 11.2V supply and occupies 26mm2 area. In a signal bandwidth of 1.56kHz for the touch panel application, the measured input dynamic range is 69dB and the measured peak signal-to-noise plus distortion ratio is 65.63dB with the duty-cycle control technique.
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