5.6基于150ps快速电容弛豫猝灭的400×400-Pixel 6μm螺距垂直雪崩光电二极管CMOS图像传感器，用于任意增益图像的合成

2019 IEEE International Solid- State Circuits Conference - (ISSCC) Pub Date : 2019-02-01 DOI:10.1109/ISSCC.2019.8662405

Y. Hirose, S. Koyama, T. Okino, Akito Inoue, S. Saito, Yugo Nose, M. Ishii, S. Yamahira, S. Kasuga, M. Mori, T. Kabe, K. Nakanishi, M. Usuda, A. Odagawa, Tsuyoshi Tanaka

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引用次数: 9

摘要

基于单光子雪崩光电二极管(SPAD)的CMOS图像传感器(CIS)的发展仍在继续，进展迅速[1-6]。然而，由于未建立的淬火操作[5,6]，将spad与传统像素电路一起实现到CIS上一直是一个根本性的挑战。

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5.6 A 400×400-Pixel 6μm-Pitch Vertical Avalanche Photodiodes CMOS Image Sensor Based on 150ps-Fast Capacitive Relaxation Quenching in Geiger Mode for Synthesis of Arbitrary Gain Images

The intensive development of Single-photon avalanche photodiode (SPAD) based CMOS image sensors (CIS) continues, with rapid progress [1–6]. Yet, due to unestablished quenching operation [5,6], realization of SPADs onto a CIS alongside conventional pixel circuitry has been a fundamental challenge.

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2019 IEEE International Solid- State Circuits Conference - (ISSCC)

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