{"title":"基于薛定谔方程时变解的高频谐振隧穿结构分析","authors":"I. Saadat, J.P. Krusius","doi":"10.1109/CORNEL.1989.79845","DOIUrl":null,"url":null,"abstract":"The characteristics of a new compound-semiconductor heterostructure tunneling resonator are analyzed using the time-dependent Schrodinger equation. The device is formed by imbedding the usual double-barrier tunneling structure between two additional heterojunctions forming the reflectors of the resonator. Tunable quantum mechanical oscillations in the frequency range from 300 to 600 GHz are observed for typical device parameters. Two potential millimeter-wave device applications are proposed.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of resonant tunneling structures for high frequency oscillator applications via time-dependent solution of Schrodinger's equation\",\"authors\":\"I. Saadat, J.P. Krusius\",\"doi\":\"10.1109/CORNEL.1989.79845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The characteristics of a new compound-semiconductor heterostructure tunneling resonator are analyzed using the time-dependent Schrodinger equation. The device is formed by imbedding the usual double-barrier tunneling structure between two additional heterojunctions forming the reflectors of the resonator. Tunable quantum mechanical oscillations in the frequency range from 300 to 600 GHz are observed for typical device parameters. Two potential millimeter-wave device applications are proposed.<<ETX>>\",\"PeriodicalId\":445524,\"journal\":{\"name\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1989.79845\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of resonant tunneling structures for high frequency oscillator applications via time-dependent solution of Schrodinger's equation
The characteristics of a new compound-semiconductor heterostructure tunneling resonator are analyzed using the time-dependent Schrodinger equation. The device is formed by imbedding the usual double-barrier tunneling structure between two additional heterojunctions forming the reflectors of the resonator. Tunable quantum mechanical oscillations in the frequency range from 300 to 600 GHz are observed for typical device parameters. Two potential millimeter-wave device applications are proposed.<>
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