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引用次数: 0
摘要
本文介绍了一种新型的20.5-25.5GHz 8瓦功率放大器(PA)单片微波集成电路(MMIC)的设计和性能测试。该电路的线性增益高于20dB,输出功率为8瓦,功率附加效率(PAE)在该频段内优于30%。MMIC采用UMS代工公司基于GH15工艺的0.15 μ m$ GaN高电子迁移率晶体管(HEMT)设计。为了更好地理解本文提出的新型输出功率匹配网络的有效性,除了不同的输出功率匹配网络外,还设计了两个相同的放大器。在功率放大器中采用了新颖的输出功率匹配电路,使损耗最小,减少了输出阻抗在频率上的扩散,从而获得更宽频带的输出功率、PAE和输出匹配。在最终输出阶段,总共四个尺寸为$75 μ m x 8$的hemt组合在一起以获得所需的输出功率。用史密斯图详细讨论了输出阻抗从单点50欧姆到HEMT最佳PAE所需阻抗的转换,史密斯图显示了每个匹配元件的贡献。
K-Band 8-Watt Power Amplifier MMICs using 150nm GaN process for Satellite Transponder
This paper presents the design and measured performance of a novel 20.5-25.5GHz 8-Watt Power Amplifier (PA) Monolithic Microwave Integrated Circuit (MMIC). The circuit provides linear gain higher than 20dB, output power of 8-Watt and Power Added Efficiency (PAE) better than 30% over the band. The MMIC is designed using $0.15\mu m$ GaN highelectron mobility transistor (HEMT) based GH15 process from UMS foundry. Two identical amplifiers are designed except different output power matching networks (OMN) to better understand effectiveness of novel OMN presented in the paper. Novel output power matching circuit used in the power amplifier adds minimum loss and reduces the spread of output impedance over the frequency to obtain output power, PAE and output matching over wider band. Total four HEMTs of size $75 \mu m x 8$ are combined at final output stage to obtain desired output power. Transformation of output impedance from single point 50Ohm to required impedance for optimum PAE for HEMT is discussed in detail using smith chart showing contribution of each matching element.