{"title":"红外波段与硅中多空位氧缺陷的关联","authors":"N. Sarlis, C. A. Londos","doi":"10.1109/SMICND.1996.557304","DOIUrl":null,"url":null,"abstract":"Localized vibrational mode (LVM) studies in neutron irradiated oxygen-rich silicon have been carried out in order to investigate the origin of certain bands appearing in the spectra after heat treatment. The investigation was mainly focused on two satellite lines at 840 cm/sup -1/ and 825 cm/sup -1/ observed on either side of the 829 cm/sup -1/ band of VO above 250/spl deg/C and 350/spl deg/C respectively, upon 15 min isochronal annealings. Theoretical analysis supports the identification of the two satellites with V/sub 2/O and V/sub 2/O/sub 2/ defects respectively.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Infrared bands association with multivacancy-oxygen defects in silicon\",\"authors\":\"N. Sarlis, C. A. Londos\",\"doi\":\"10.1109/SMICND.1996.557304\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Localized vibrational mode (LVM) studies in neutron irradiated oxygen-rich silicon have been carried out in order to investigate the origin of certain bands appearing in the spectra after heat treatment. The investigation was mainly focused on two satellite lines at 840 cm/sup -1/ and 825 cm/sup -1/ observed on either side of the 829 cm/sup -1/ band of VO above 250/spl deg/C and 350/spl deg/C respectively, upon 15 min isochronal annealings. Theoretical analysis supports the identification of the two satellites with V/sub 2/O and V/sub 2/O/sub 2/ defects respectively.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557304\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Infrared bands association with multivacancy-oxygen defects in silicon
Localized vibrational mode (LVM) studies in neutron irradiated oxygen-rich silicon have been carried out in order to investigate the origin of certain bands appearing in the spectra after heat treatment. The investigation was mainly focused on two satellite lines at 840 cm/sup -1/ and 825 cm/sup -1/ observed on either side of the 829 cm/sup -1/ band of VO above 250/spl deg/C and 350/spl deg/C respectively, upon 15 min isochronal annealings. Theoretical analysis supports the identification of the two satellites with V/sub 2/O and V/sub 2/O/sub 2/ defects respectively.
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