结面积小于10 × 10 nm2的忆阻器交叉棒阵列

2012 13th International Workshop on Cellular Nanoscale Networks and their Applications Pub Date : 2012-10-18 DOI:10.1109/CNNA.2012.6331452

Shuang Pi, P. Lin, Q. Xia

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引用次数: 2

摘要

我们使用稀释的氢氟酸将二氧化硅纳米压印模具的特征尺寸缩小到10纳米以下。利用该模具，我们利用纳米压印光刻技术制造了忆阻器横条阵列。我们证明了具有小结面积的忆阻器器件具有高开/关比和低工作电流的双极非易失性开关行为。

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Memristor crossbar arrays with junction areas towards sub-10 × 10 nm2

We used diluted hydrofluoric acid to shrink the feature size of a silicon dioxide nanoimprint mold to sub-10 nm regime. Using this mold, we have fabricated memristor crossbar arrays using nanoimprint lithography. We demonstrated that memristor devices with small junction areas exhibited bipolar non-volatile switching behavior with high ON/OFF ratio and low operational current.

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2012 13th International Workshop on Cellular Nanoscale Networks and their Applications

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