{"title":"Bi/K共掺BaTiO3铁电陶瓷的结构、介电性能和电学性能","authors":"Preetisnigdha Sahu, R. Choudhary, S. Samal","doi":"10.1109/APSIT58554.2023.10201771","DOIUrl":null,"url":null,"abstract":"Lead-free ferroelectric ceramic (Ba0.8Bi0.1K0. 1) TiO3 prepared by conventional solid state synthesis route and well sintered at 1200 °C. The room-temperature x-ray diffraction and FESEM data analysis confirmed the phase structure, space group, lattice parameters, and microstructure. The dielectric properties in a wide frequency and temperature range show a fully temperature dependent dielectric constant (with transition at 184°C) and a very low dielectric loss at lower temperatures. The impedance investigation (Nyquist plot) demonstrates non-Debye type conduction, NTCR behavior, and grain and grain boundary contributions. Given the aforementioned traits, it can be used in the electronics industry.","PeriodicalId":170044,"journal":{"name":"2023 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural, dielectric and electrical properties of Bi/K co-doped BaTiO3 ferroelectric ceramics\",\"authors\":\"Preetisnigdha Sahu, R. Choudhary, S. Samal\",\"doi\":\"10.1109/APSIT58554.2023.10201771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lead-free ferroelectric ceramic (Ba0.8Bi0.1K0. 1) TiO3 prepared by conventional solid state synthesis route and well sintered at 1200 °C. The room-temperature x-ray diffraction and FESEM data analysis confirmed the phase structure, space group, lattice parameters, and microstructure. The dielectric properties in a wide frequency and temperature range show a fully temperature dependent dielectric constant (with transition at 184°C) and a very low dielectric loss at lower temperatures. The impedance investigation (Nyquist plot) demonstrates non-Debye type conduction, NTCR behavior, and grain and grain boundary contributions. Given the aforementioned traits, it can be used in the electronics industry.\",\"PeriodicalId\":170044,\"journal\":{\"name\":\"2023 International Conference in Advances in Power, Signal, and Information Technology (APSIT)\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 International Conference in Advances in Power, Signal, and Information Technology (APSIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APSIT58554.2023.10201771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APSIT58554.2023.10201771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural, dielectric and electrical properties of Bi/K co-doped BaTiO3 ferroelectric ceramics
Lead-free ferroelectric ceramic (Ba0.8Bi0.1K0. 1) TiO3 prepared by conventional solid state synthesis route and well sintered at 1200 °C. The room-temperature x-ray diffraction and FESEM data analysis confirmed the phase structure, space group, lattice parameters, and microstructure. The dielectric properties in a wide frequency and temperature range show a fully temperature dependent dielectric constant (with transition at 184°C) and a very low dielectric loss at lower temperatures. The impedance investigation (Nyquist plot) demonstrates non-Debye type conduction, NTCR behavior, and grain and grain boundary contributions. Given the aforementioned traits, it can be used in the electronics industry.