Bi/K共掺BaTiO3铁电陶瓷的结构、介电性能和电学性能

Preetisnigdha Sahu, R. Choudhary, S. Samal
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引用次数: 0

摘要

无铅铁电陶瓷(Ba0.8Bi0.1K0。1)采用常规固相合成路线制备TiO3,并在1200℃下烧结良好。室温x射线衍射和FESEM数据分析证实了相结构、空间群、晶格参数和微观结构。在宽频率和温度范围内的介电特性显示出完全依赖于温度的介电常数(在184°C时发生转变),并且在较低温度下具有非常低的介电损耗。阻抗调查(Nyquist图)显示了非debye型传导、NTCR行为以及晶粒和晶界的贡献。鉴于上述特点,它可以用于电子工业。
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Structural, dielectric and electrical properties of Bi/K co-doped BaTiO3 ferroelectric ceramics
Lead-free ferroelectric ceramic (Ba0.8Bi0.1K0. 1) TiO3 prepared by conventional solid state synthesis route and well sintered at 1200 °C. The room-temperature x-ray diffraction and FESEM data analysis confirmed the phase structure, space group, lattice parameters, and microstructure. The dielectric properties in a wide frequency and temperature range show a fully temperature dependent dielectric constant (with transition at 184°C) and a very low dielectric loss at lower temperatures. The impedance investigation (Nyquist plot) demonstrates non-Debye type conduction, NTCR behavior, and grain and grain boundary contributions. Given the aforementioned traits, it can be used in the electronics industry.
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