Chun Yang, Xiaojie Xu, Haiyan Lu, Jixin Chen, Debin Hou
{"title":"基于0.1 μm GaAs pHEMT技术的宽带e带驱动放大器","authors":"Chun Yang, Xiaojie Xu, Haiyan Lu, Jixin Chen, Debin Hou","doi":"10.1109/IWS55252.2022.9977451","DOIUrl":null,"url":null,"abstract":"A broadband E-band driver amplifier fabricated in 0.1 μm GaAs pHEMT technology is proposed in this paper. The amplifier is composed of three common-source stages. To realize the wide bandwidth, high order matching networks are utilized, and the center frequency of each stage is separated. Measure-ments show a peak small-signal gain of 18.3 dB at 66 GHz with a relative 3-dB bandwidth of 42.5% (61–94 GHz). The saturated output power is greater than 15 dBm in the 3-dB bandwidth frequency range with a peak of 18.7 dBm at 75 GHz. The amplifier draws a 152 mA current with a supply voltage of 4 V and the size is 1.1x0.8 mm2 including pads. The results show that the pro-posed driver amplifier achieves competitive gain and remarkable bandwidth in E-band.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Broadband E-band Driver Amplifier in 0.1 μm GaAs pHEMT Technology\",\"authors\":\"Chun Yang, Xiaojie Xu, Haiyan Lu, Jixin Chen, Debin Hou\",\"doi\":\"10.1109/IWS55252.2022.9977451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband E-band driver amplifier fabricated in 0.1 μm GaAs pHEMT technology is proposed in this paper. The amplifier is composed of three common-source stages. To realize the wide bandwidth, high order matching networks are utilized, and the center frequency of each stage is separated. Measure-ments show a peak small-signal gain of 18.3 dB at 66 GHz with a relative 3-dB bandwidth of 42.5% (61–94 GHz). The saturated output power is greater than 15 dBm in the 3-dB bandwidth frequency range with a peak of 18.7 dBm at 75 GHz. The amplifier draws a 152 mA current with a supply voltage of 4 V and the size is 1.1x0.8 mm2 including pads. The results show that the pro-posed driver amplifier achieves competitive gain and remarkable bandwidth in E-band.\",\"PeriodicalId\":126964,\"journal\":{\"name\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS55252.2022.9977451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Broadband E-band Driver Amplifier in 0.1 μm GaAs pHEMT Technology
A broadband E-band driver amplifier fabricated in 0.1 μm GaAs pHEMT technology is proposed in this paper. The amplifier is composed of three common-source stages. To realize the wide bandwidth, high order matching networks are utilized, and the center frequency of each stage is separated. Measure-ments show a peak small-signal gain of 18.3 dB at 66 GHz with a relative 3-dB bandwidth of 42.5% (61–94 GHz). The saturated output power is greater than 15 dBm in the 3-dB bandwidth frequency range with a peak of 18.7 dBm at 75 GHz. The amplifier draws a 152 mA current with a supply voltage of 4 V and the size is 1.1x0.8 mm2 including pads. The results show that the pro-posed driver amplifier achieves competitive gain and remarkable bandwidth in E-band.
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