A. Petrocchi, G. Crupi, V. Vadalà, G. Avolio, A. Raffo, D. Schreurs, A. Caddemi, G. Vannini
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引用次数: 3
摘要
本研究着重于0.25×1500 μm2 GaN HEMT的温度依赖性表征。报道并讨论了环境温度对微波性能的影响。结果表明，随着温度的升高，平均电子速度的降低会导致主要参量的显著降低。
Thermal characterization of high-power GaN HEMTs up to 65 GHz
This study focuses on temperature dependent characterization of a 0.25×1500 μm2 GaN HEMT. The impact of the ambient temperature on the microwave performance is reported and discussed. It is achieved that the reduction of the average electron velocity with increasing temperature leads to a remarkably degradation of the main figures of merit.
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