利用模拟网络进行微电子结构的温度评估

G. Rezek
{"title":"利用模拟网络进行微电子结构的温度评估","authors":"G. Rezek","doi":"10.1109/TPEP.1965.1136696","DOIUrl":null,"url":null,"abstract":"The steady-state and transient temperature elevations within a composite electronic or microelectronic structure can be analyzed by using a known method of converting a thermal system into an analog electrical system (Reference 1). The temoerature elevations are caused by heat generation and heat flow within an electronic structure and by convection and radiation heat flow away from the structure.","PeriodicalId":313371,"journal":{"name":"IEEE Transactions on Product Engineering and Production","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1965-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Temperature Evaluation in Microelectronics Structures Using Analog Networks\",\"authors\":\"G. Rezek\",\"doi\":\"10.1109/TPEP.1965.1136696\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The steady-state and transient temperature elevations within a composite electronic or microelectronic structure can be analyzed by using a known method of converting a thermal system into an analog electrical system (Reference 1). The temoerature elevations are caused by heat generation and heat flow within an electronic structure and by convection and radiation heat flow away from the structure.\",\"PeriodicalId\":313371,\"journal\":{\"name\":\"IEEE Transactions on Product Engineering and Production\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1965-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Product Engineering and Production\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TPEP.1965.1136696\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Product Engineering and Production","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TPEP.1965.1136696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

复合电子或微电子结构内的稳态和瞬态温度升高可以通过使用将热系统转换为模拟电气系统的已知方法来分析(参考文献1)。温度升高是由电子结构内的热量产生和热流以及从结构流出的对流和辐射热流引起的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Temperature Evaluation in Microelectronics Structures Using Analog Networks
The steady-state and transient temperature elevations within a composite electronic or microelectronic structure can be analyzed by using a known method of converting a thermal system into an analog electrical system (Reference 1). The temoerature elevations are caused by heat generation and heat flow within an electronic structure and by convection and radiation heat flow away from the structure.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Book listing Temperature Evaluation in Microelectronics Structures Using Analog Networks Technology in Electronics and International Trade New Developments in Weldable Electronic Circuit Boards Dip-Brazing Aluminum Alloys for Light-Weight, Compact Aerospace Electronics Equipment
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1