C. Viegas, B. Alderman, C. Pérez-Moreno, J. Powell, C. Duff, R. Sloan
{"title":"160 GHz大功率倍频器的设计与热分析","authors":"C. Viegas, B. Alderman, C. Pérez-Moreno, J. Powell, C. Duff, R. Sloan","doi":"10.1109/IMARC.2016.7939631","DOIUrl":null,"url":null,"abstract":"This paper presents the design and thermal analysis of a high-power Schottky diode frequency doubler at 160 GHz. The design is capable of achieving ∼10% 3 dB bandwidth with a peak conversion efficiency of ∼25% for an input power of 100 mW at 295 K. Thermal characterization of the design includes modelling and measurement of the power dissipation in the discrete diode under different temperatures. The results obtained from the experiments have been validated by a physics-based electro-thermal simulator for Schottky diodes.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Design and thermal analysis of a high-power frequency doubler at 160 GHz\",\"authors\":\"C. Viegas, B. Alderman, C. Pérez-Moreno, J. Powell, C. Duff, R. Sloan\",\"doi\":\"10.1109/IMARC.2016.7939631\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and thermal analysis of a high-power Schottky diode frequency doubler at 160 GHz. The design is capable of achieving ∼10% 3 dB bandwidth with a peak conversion efficiency of ∼25% for an input power of 100 mW at 295 K. Thermal characterization of the design includes modelling and measurement of the power dissipation in the discrete diode under different temperatures. The results obtained from the experiments have been validated by a physics-based electro-thermal simulator for Schottky diodes.\",\"PeriodicalId\":341661,\"journal\":{\"name\":\"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMARC.2016.7939631\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2016.7939631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and thermal analysis of a high-power frequency doubler at 160 GHz
This paper presents the design and thermal analysis of a high-power Schottky diode frequency doubler at 160 GHz. The design is capable of achieving ∼10% 3 dB bandwidth with a peak conversion efficiency of ∼25% for an input power of 100 mW at 295 K. Thermal characterization of the design includes modelling and measurement of the power dissipation in the discrete diode under different temperatures. The results obtained from the experiments have been validated by a physics-based electro-thermal simulator for Schottky diodes.