{"title":"具有不同埋栅形状的InAlAs/InGaAs hemt的蒙特卡罗模拟","authors":"A. Endoh, I. Watanabe, A. Kasamatsu, T. Mimura","doi":"10.1109/SISPAD.2014.6931613","DOIUrl":null,"url":null,"abstract":"We carried out Monte Carlo (MC) simulation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMT with a “realistic” buried gate in which the tip of gate foot is “round.” We found that the “effective” gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field in the channel layer. Furthermore, the “round” tip of gate electrode is convenient to prevent breakdown.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate\",\"authors\":\"A. Endoh, I. Watanabe, A. Kasamatsu, T. Mimura\",\"doi\":\"10.1109/SISPAD.2014.6931613\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We carried out Monte Carlo (MC) simulation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMT with a “realistic” buried gate in which the tip of gate foot is “round.” We found that the “effective” gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field in the channel layer. Furthermore, the “round” tip of gate electrode is convenient to prevent breakdown.\",\"PeriodicalId\":101858,\"journal\":{\"name\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2014.6931613\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931613","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate
We carried out Monte Carlo (MC) simulation of In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMT with a “realistic” buried gate in which the tip of gate foot is “round.” We found that the “effective” gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field in the channel layer. Furthermore, the “round” tip of gate electrode is convenient to prevent breakdown.
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