1伏特开关晶体管混频器在0.18 /spl μ m CMOS

E. Klumperink, S. Louwsma, G. Wienk, B. Nauta
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引用次数: 4

摘要

一种新的CMOS混频器拓扑可以通过使用仅连接到电源的开关在低电源电压下工作。混合是利用由开关交替激活的两个交叉耦合的transconductor来实现的。设计了一个转换增益为12 dB的下变频混频器原型,并在标准的0.18 /spl mu/m CMOS上实现。它在1伏特的电源电压下达到了令人满意的4ghz混频器性能。此外,混频器拓扑结构具有基本的高频噪声系数优势。
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A 1 Volt switched transconductor mixer in 0.18 /spl mu/m CMOS
A new CMOS mixer topology can operate at low supply voltages by using switches connected only to the supplies. Mixing is achieved exploiting two cross-coupled transconductors, which are alternatingly activated by the switches. A down conversion mixer prototype with 12 dB conversion gain was designed and realized in standard 0.18 /spl mu/m CMOS. It achieves satisfactory mixer performance up to 4 GHz, at a supply voltage of 1 Volt. Moreover, the mixer topology features a fundamental high frequency noise figure benefit.
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