基于SADP和电子束的一维布局制造的吞吐量优化

Yixiao Ding, C. Chu, Wai-Kei Mak
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引用次数: 39

摘要

由于光学光刻设备分辨率的限制,一维网格布局设计正逐渐受到重视。自对齐双模(SADP)是一种成熟的一维版面打印技术。然而,对于20nm及以上,使用单个修整掩模的SADP不足以打印所有1D布局。一个可行的解决方案是用电子束光刻技术补充SADP。为了提高一维布局的打印吞吐量,本文考虑了在有界线端延伸约束下电子束射射数最小化的问题。考虑了两种不同的方法,利用修剪掩模和电子束来打印布局。第一种方法是在假设修剪掩模和电子束被用于末端切割的情况下。第二个是在假设修剪掩模和电子束是用来摆脱所有不必要的部分。我们为这两种方法提出了优雅的ILP公式。实验结果表明,这两种ILP公式都能有效求解。讨论了制造一维布局的两种方法的优缺点。
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Throughput optimization for SADP and e-beam based manufacturing of 1D layout
Due to the resolution limitations of optical lithography equipment, 1D gridded layout design is gaining steam. Self-aligned double patterning (SADP) is a mature technology for printing 1D layouts. However, for 20nm and beyond, SADP using a single trim mask becomes insufficient for printing all 1D layouts. A viable solution is to complement SADP with e-beam lithography. In this paper, in order to increase the throughput of printing a 1D layout, we consider the problem of e-beam shot count minimization subject to bounded line end extension constraints. Two different approaches of utilizing the trim mask and e-beam to print a layout are considered. The first approach is under the assumption that the trim mask and e-beam are used for end cutting. The second is under the assumption that the trim mask and e-beam are used to rid of all unnecessary portions. We propose elegant ILP formulations for both approaches. Experimental results show that both ILP formulations can be solved efficiently. The pros and cons of the two approaches for manufacturing 1D layout are discussed.
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