p掺杂谱线对应变多量子阱InGaAsP-InP激光器性能的影响:实验与建模

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553752

G. Belenky, C. Reynolds, R. Kazarinov, V. Swaminathan, S. Luryi, J. Lopata

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摘要

只提供摘要形式。在本文中，我们通过实验证明了在多量子阱器件中使用掺杂波导(或单独的约束层- sch层)可以抑制电子泄漏电流。我们的实验揭示了p掺杂谱对阈值温度敏感性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers: experiment and modeling

Summary form only given. In this paper we show experimentally that utilization of a doped waveguide (or a separate confinement layer-SCH layer) leads to suppression of electron leakage current in multi-quantum-well devices. Our experiments reveal the influence of p-doping profile on the temperature sensitivity of threshold.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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