一种分析亚阈值电路中热噪声瞬态效应的仿真框架

M. Donato, R. I. Bahar, W. Patterson, A. Zaslavsky
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引用次数: 5

摘要

非线性逻辑电路中的噪声分析需要考虑时变偏置条件的模型。当考虑使电路偏离平衡点的热噪声时,正确的建模方法必须超越经典噪声分析中使用的加性高斯白噪声(AWGN)。即使有了精确的模型,运行标准的蒙特卡罗模拟也可能暴露出罕见的软错误,这在计算上仍然是令人望而却步的。概率方法通常用于估计故障率。然而,这些方法可能无法提供对噪声事件的动态响应的任何见解。在本文中,我们针对这两个问题在亚阈值逻辑应用领域。我们首先提供了亚阈值电路中基本的、与技术无关的热噪声的时域模型。然后,利用该模型生成用于SPICE瞬态分析的噪声输入文件。使用用于逆变器和NAND门的7nm FinFET预测技术模型(PTM)证明了该方法的有效性。
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A Simulation Framework for Analyzing Transient Effects Due to Thermal Noise in Sub-Threshold Circuits
Noise analysis in nonlinear logic circuits requires models that take into account time-varying biasing conditions. When considering thermal noise, which moves the circuit away from its equilibrium point, a correct modeling approach has to go beyond the additive white Gaussian noise (AWGN) used in classical noise analysis. Even when accurate models are available, running standard Monte-Carlo simulations that will expose rare soft errors may still be computationally prohibitive. Probabilistic methods are often preferred for estimating the failure rate. However, these approaches may not provide any insight about the dynamic response to noise events. In this paper, we target both problems in the sub-threshold logic application domain. We first provide a time-domain model for fundamental, technology-independent thermal noise in sub-threshold circuits. Then, we use this model to generate noise input files for SPICE transient analysis. The effectiveness of the approach is demonstrated using 7nm FinFET predictive technology models (PTM) for an inverter and a NAND gate.
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