倒装芯片热偏移失效机制研究

W. Roesch, S. Jittinorasett
{"title":"倒装芯片热偏移失效机制研究","authors":"W. Roesch, S. Jittinorasett","doi":"10.1109/GAASRW.2003.183770","DOIUrl":null,"url":null,"abstract":"Flip Chip assembly offers a reliable, sinall footprint, thermally enhanced alternative to wire bonding. New copper ‘bumps”increase Flip Chip advantages for GaAs devices. This study will address failure mechanisms accelerated by thermal excursions for new copper bumps. Thermal excursion mechanisms are ones accelerated by temperature cycling, thcnnal shock, simulation of assembly reflow or power cycling.[i J","PeriodicalId":431077,"journal":{"name":"Proceedings GaAs Reliability Workshop, 2003.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Investigating thermal excursion failure mechanisms for flip chip\",\"authors\":\"W. Roesch, S. Jittinorasett\",\"doi\":\"10.1109/GAASRW.2003.183770\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Flip Chip assembly offers a reliable, sinall footprint, thermally enhanced alternative to wire bonding. New copper ‘bumps”increase Flip Chip advantages for GaAs devices. This study will address failure mechanisms accelerated by thermal excursions for new copper bumps. Thermal excursion mechanisms are ones accelerated by temperature cycling, thcnnal shock, simulation of assembly reflow or power cycling.[i J\",\"PeriodicalId\":431077,\"journal\":{\"name\":\"Proceedings GaAs Reliability Workshop, 2003.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings GaAs Reliability Workshop, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.2003.183770\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings GaAs Reliability Workshop, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.2003.183770","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

倒装芯片组装提供了一个可靠的,小占地面积,热增强替代线键合。新的铜“凸起”增加了GaAs器件的倒装芯片优势。这项研究将解决新铜凸起的热漂移加速的失效机制。热偏移机制是由温度循环、冲击、装配回流模拟或功率循环加速的机制。[我
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Investigating thermal excursion failure mechanisms for flip chip
Flip Chip assembly offers a reliable, sinall footprint, thermally enhanced alternative to wire bonding. New copper ‘bumps”increase Flip Chip advantages for GaAs devices. This study will address failure mechanisms accelerated by thermal excursions for new copper bumps. Thermal excursion mechanisms are ones accelerated by temperature cycling, thcnnal shock, simulation of assembly reflow or power cycling.[i J
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
High-resolution transmission electron microscopy on aged inp HBTs Lifetime acceleration model for HAST tests of a pHEMT process Off-state PHEMT breakdown: a temperature-dependent analysis Investigating thermal excursion failure mechanisms for flip chip Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based beterostructure FETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1