二氧化硅帽无序制备GaAs/AlAs超晶格中TE/TM模式选择性通道波导

Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E Pub Date : 1900-01-01 DOI:10.1063/1.103274

Yasuhiro Suzuki, H. Iwamura, O. Mikami

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引用次数: 32

摘要

提出了一种新型的TE/TM模式选择光通道波导结构，并利用二氧化硅帽退火诱导的无杂质无序在GaAs/AlAs超晶格(SLs)中制备。研究发现，即使在接近生长的SL吸收边缘的波长处，无序的SL区域也可以作为低损耗波导使用。通过观察近场模式，证实了这些通道波导可以选择性地限制TE或TM偏振光。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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TE/TM mode selective channel waveguides in GaAs/AlAs superlattice fabricated by SiO2 cap disordering

Novel structure TE/TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity‐free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low‐loss waveguides even at a wavelength close to the absorption edge of the as‐grown SL. By observing the near‐field patterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light.

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