单片v波段大功率变容可调谐HEMT振荡器

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493712

M. Schefer, U. Lott, B. Klepser, H. Meier, W. Patrick, W. Bachtold

{"title":"单片v波段大功率变容可调谐HEMT振荡器","authors":"M. Schefer, U. Lott, B. Klepser, H. Meier, W. Patrick, W. Bachtold","doi":"10.1109/EDMO.1995.493712","DOIUrl":null,"url":null,"abstract":"The design, fabrication, and the measured results of V-band monolithically integrated fundamental oscillators are presented. The active device is a 0.2 /spl mu/m InP based HEMT with f/sub max/=200 GHz and f/sub t/=100 GHz. A basic V-band oscillator, a high power and a varactor tuned oscillator are compared. The resonance frequency of the basic oscillator is 54.333 GHz and the phase noise -70 dBc/Hz @ 1 MHz offset. The high power oscillator shows 83 dBm output power at 48 GHz For the varactor tunable oscillator an output power of 0 dBm at 63 GHz and a tuning range of 100 MHz are measured. The circuits were fabricated in coplanar technology.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"136 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Monolithic V-band high power and varactor tunable HEMT oscillators\",\"authors\":\"M. Schefer, U. Lott, B. Klepser, H. Meier, W. Patrick, W. Bachtold\",\"doi\":\"10.1109/EDMO.1995.493712\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design, fabrication, and the measured results of V-band monolithically integrated fundamental oscillators are presented. The active device is a 0.2 /spl mu/m InP based HEMT with f/sub max/=200 GHz and f/sub t/=100 GHz. A basic V-band oscillator, a high power and a varactor tuned oscillator are compared. The resonance frequency of the basic oscillator is 54.333 GHz and the phase noise -70 dBc/Hz @ 1 MHz offset. The high power oscillator shows 83 dBm output power at 48 GHz For the varactor tunable oscillator an output power of 0 dBm at 63 GHz and a tuning range of 100 MHz are measured. The circuits were fabricated in coplanar technology.\",\"PeriodicalId\":431745,\"journal\":{\"name\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"volume\":\"136 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.1995.493712\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

介绍了v波段单片集成基频振荡器的设计、制造和测量结果。有源器件是基于0.2 /spl mu/m InP的HEMT, f/sub max/=200 GHz, f/sub t/=100 GHz。对基本v波段振荡器、大功率变容管调谐振荡器进行了比较。基本振荡器的谐振频率为54.333 GHz，相位噪声为-70 dBc/Hz @ 1 MHz偏移。该变容可调谐振荡器在63 GHz时的输出功率为0 dBm，调谐范围为100 MHz。电路采用共面工艺制作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Monolithic V-band high power and varactor tunable HEMT oscillators

The design, fabrication, and the measured results of V-band monolithically integrated fundamental oscillators are presented. The active device is a 0.2 /spl mu/m InP based HEMT with f/sub max/=200 GHz and f/sub t/=100 GHz. A basic V-band oscillator, a high power and a varactor tuned oscillator are compared. The resonance frequency of the basic oscillator is 54.333 GHz and the phase noise -70 dBc/Hz @ 1 MHz offset. The high power oscillator shows 83 dBm output power at 48 GHz For the varactor tunable oscillator an output power of 0 dBm at 63 GHz and a tuning range of 100 MHz are measured. The circuits were fabricated in coplanar technology.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

自引率

0.00%

发文量