Kaijie Ding, D. Milosevic, V. Vidojkovic, Rainier van Dommele, M. Bentum, P. Baltus
{"title":"一种23g Hz射频波束形成发射机，具有> 15.5 dBm $\\ mathm {P}_{\\text{sat}}$和>21.7%的星间通信峰值效率","authors":"Kaijie Ding, D. Milosevic, V. Vidojkovic, Rainier van Dommele, M. Bentum, P. Baltus","doi":"10.1109/RFIC54546.2022.9863123","DOIUrl":null,"url":null,"abstract":"This paper presents a 23GHz RF -beamforming transmitter (TX) for inter-satellite communications. By combining a variable gain amplifier (VGA), a phase shifter (PS), and a four-inductor-coupling differential quadrature-signal (IQ) generator, a power-efficient design with high compactness is demonstrated. The chip is fabricated in a 130nm SiGe BiCMOS technology. It achieves a measured saturated output power (Psat) of >15.5dBm and a peak TX efficiency of >21.7%, with 2.09° RMS phase error and >29.3dB maximum power gain. The realized mm-wave TX supports 64-QAM with a 900Mbps data rate, the Error Vector Magnitude (EVM) of 4.98% (-26.06dB), the Adjacent Channel Power Ratio (ACPR) of −30.1dBc, and TX efficiency of 8.52% are measured at 9.2dBm output power. The core area of this TX is 0.9mm x 0.23mm.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 23 G Hz RF - beamforming Transmitter with > 15.5 dBm $\\\\mathrm{P}_{\\\\text{sat}}$ and >21.7% Peak Efficiency for Inter-satellite Communications\",\"authors\":\"Kaijie Ding, D. Milosevic, V. Vidojkovic, Rainier van Dommele, M. Bentum, P. Baltus\",\"doi\":\"10.1109/RFIC54546.2022.9863123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 23GHz RF -beamforming transmitter (TX) for inter-satellite communications. By combining a variable gain amplifier (VGA), a phase shifter (PS), and a four-inductor-coupling differential quadrature-signal (IQ) generator, a power-efficient design with high compactness is demonstrated. The chip is fabricated in a 130nm SiGe BiCMOS technology. It achieves a measured saturated output power (Psat) of >15.5dBm and a peak TX efficiency of >21.7%, with 2.09° RMS phase error and >29.3dB maximum power gain. The realized mm-wave TX supports 64-QAM with a 900Mbps data rate, the Error Vector Magnitude (EVM) of 4.98% (-26.06dB), the Adjacent Channel Power Ratio (ACPR) of −30.1dBc, and TX efficiency of 8.52% are measured at 9.2dBm output power. The core area of this TX is 0.9mm x 0.23mm.\",\"PeriodicalId\":415294,\"journal\":{\"name\":\"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC54546.2022.9863123\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC54546.2022.9863123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 23 G Hz RF - beamforming Transmitter with > 15.5 dBm $\mathrm{P}_{\text{sat}}$ and >21.7% Peak Efficiency for Inter-satellite Communications
This paper presents a 23GHz RF -beamforming transmitter (TX) for inter-satellite communications. By combining a variable gain amplifier (VGA), a phase shifter (PS), and a four-inductor-coupling differential quadrature-signal (IQ) generator, a power-efficient design with high compactness is demonstrated. The chip is fabricated in a 130nm SiGe BiCMOS technology. It achieves a measured saturated output power (Psat) of >15.5dBm and a peak TX efficiency of >21.7%, with 2.09° RMS phase error and >29.3dB maximum power gain. The realized mm-wave TX supports 64-QAM with a 900Mbps data rate, the Error Vector Magnitude (EVM) of 4.98% (-26.06dB), the Adjacent Channel Power Ratio (ACPR) of −30.1dBc, and TX efficiency of 8.52% are measured at 9.2dBm output power. The core area of this TX is 0.9mm x 0.23mm.
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