180nm CMOS工艺中72dB高PSRR高增益的Miller补偿运算放大器设计

Abdul Qadir Khan, Harshit Yadav, Paurush Bhulania
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引用次数: 1

摘要

本文介绍了两级互补金属氧化物半导体运算放大器的设计,其中OpAmp是在T-SPICE上设计的,采用180 nm技术,并采用米勒补偿技术来获得大增益和PSRR。结合外部反馈部署的组件,运算放大器可以用于许多应用,例如在交流和直流信号,振荡器,滤波器,稳压器,比较器和其他电路中的放大。在这项工作中,重点是实现大增益和高增益带宽的产品。工作是为了获得更高的相位裕度和更少的耗散功率的稳定值。为了测试目标参数,进行了大量的仿真,确定了51 MHz GBW下的72 dB增益。相位裕度为57°,转换速率为24 V/μs。设计并进行了各种仿真,验证了其功耗为290 μW, PSRR为94.66 dB的性能。所有结果表明,所提出的运算放大器在比较器和其他数据转换服务中具有良好的用途。
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Miller Compensated Op-Amp Design for High PSRR & High Gain of 72dB in 180-nm CMOS Process
Design of two stage Complementry Metal Oxide Semiconductor Operational amplifier has presented in this work, where the OpAmp is designed on T-SPICE with the help of 180 nm technology, also with miller compensation technique for large gain and PSRR. On incorporating the components of external feedback deployment, the op-amp can be utilized for a many applications e.g. in amplifications in ac & dc signals, oscillators, filters, regulators, comparators & other circuits. In this work, emphasis is given for achieving product of a large gain & also higher gain bandwidth. Work has been for obtaining a higher stability value in terms of Phase Margin & less dissipating power. Number of simulations had been presented for testing the targeted parameters, confirming a 72 dB gain with 51 MHz GBW. The phase margin of 57° have attained along with a slew rate value of 24 V/μs. The design & various simulations had carried out for validating the performance of power dissipation having value 290 μW & value of PSRR as 94.66 dB. With all results, the proposed Op-Amp provides a good use in comparator & other data converting services.
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