An experimental and analytical method to observe the polysilicon Nanowire mosfet threshold voltage

A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. It was experimentally found that the saturation current shows the sensitivity of the Nano-wire MOSFETs if the conventional method fails to show the sensitivity depending upon the threshold voltage of Nano-wire MOSFET. It shows that the present method offers advantage over previous extraction procedure which use trans-conductance curve in the saturation mode, and the threshold voltage is determined by the intercept of curve. In addition to show how compact model for the Id-Vg characteristics are numerically evaluated and examined. The drain and gate bias dependencies of device current are shown. Also the model we proposed fits to the silicon data. Our experimental results support the model which we proposed in this paper. The drain current measured in saturation region can easily show the change in current level at different conditions but the convention theory for the linear region is difficult to do for sensitivity test of Nano-wire.