使用内部阴影掩模工艺创建纳米孔

L. D. Vreede, J. Berenschot, N. Tas, Wesley T. E. van den Beld, J. Loessberg-Zahl, A. V. D. Berg, J. Eijkel
{"title":"使用内部阴影掩模工艺创建纳米孔","authors":"L. D. Vreede, J. Berenschot, N. Tas, Wesley T. E. van den Beld, J. Loessberg-Zahl, A. V. D. Berg, J. Eijkel","doi":"10.1109/NEMS.2016.7758204","DOIUrl":null,"url":null,"abstract":"We report on the manufacturing of nanopore through-holes by heating gold nanoparticles on a silicon oxide (SiO2) sheet, suspended in a silicon-rich nitride membrane (SiRN). Membrane patterning is performed using self-alignment by an internal shadow mask based process. A benefit of this approach is the ease at which downscaling of the lithographic features can be achieved. With a single alignment, a shadow mask is etched and metal is deposited. The nanopore through hole is then created after heating. In this paper this scalable technique is applied to create non-buckled membranes by combining the compressive and tensile stress components in a SiO2/SiRN bilayer. Theory on the bilayer stresses is given in order to characterize the buckling. The nanopore through holes are characterized using ionic current measurements and electron microscopy techniques.","PeriodicalId":150449,"journal":{"name":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Nanopores created using an internal shadowmask process\",\"authors\":\"L. D. Vreede, J. Berenschot, N. Tas, Wesley T. E. van den Beld, J. Loessberg-Zahl, A. V. D. Berg, J. Eijkel\",\"doi\":\"10.1109/NEMS.2016.7758204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the manufacturing of nanopore through-holes by heating gold nanoparticles on a silicon oxide (SiO2) sheet, suspended in a silicon-rich nitride membrane (SiRN). Membrane patterning is performed using self-alignment by an internal shadow mask based process. A benefit of this approach is the ease at which downscaling of the lithographic features can be achieved. With a single alignment, a shadow mask is etched and metal is deposited. The nanopore through hole is then created after heating. In this paper this scalable technique is applied to create non-buckled membranes by combining the compressive and tensile stress components in a SiO2/SiRN bilayer. Theory on the bilayer stresses is given in order to characterize the buckling. The nanopore through holes are characterized using ionic current measurements and electron microscopy techniques.\",\"PeriodicalId\":150449,\"journal\":{\"name\":\"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2016.7758204\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2016.7758204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

我们报道了通过加热悬浮在富硅氮化膜(SiRN)中的氧化硅(SiO2)片上的金纳米颗粒来制造纳米孔通孔。膜图案是通过内部阴影掩模基于过程的自对齐来执行的。这种方法的一个好处是可以轻松地实现平刻特征的缩小。有了一个单一的对准,一个阴影掩模被蚀刻和金属沉积。然后加热后形成纳米孔。在本文中,这种可扩展的技术被应用于通过将压缩和拉伸应力成分结合在SiO2/SiRN双层中来制造非屈曲膜。为了描述屈曲现象,给出了双层应力理论。通过离子电流测量和电子显微镜技术表征纳米孔。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Nanopores created using an internal shadowmask process
We report on the manufacturing of nanopore through-holes by heating gold nanoparticles on a silicon oxide (SiO2) sheet, suspended in a silicon-rich nitride membrane (SiRN). Membrane patterning is performed using self-alignment by an internal shadow mask based process. A benefit of this approach is the ease at which downscaling of the lithographic features can be achieved. With a single alignment, a shadow mask is etched and metal is deposited. The nanopore through hole is then created after heating. In this paper this scalable technique is applied to create non-buckled membranes by combining the compressive and tensile stress components in a SiO2/SiRN bilayer. Theory on the bilayer stresses is given in order to characterize the buckling. The nanopore through holes are characterized using ionic current measurements and electron microscopy techniques.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
MEMS artificial neuromast arrays for hydrodynamic control of soft-robots In-situ cellular-scale injection for alive plants by micro-bubble injector High-throughput injection by circulating plasma-bubbles laden flows Development of a simple fabrication process for a printable piezoelectric energy harvest device A three-dimensional microfluidic device for oocyte zona-removal and incubation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1