铁电finfet闪烁噪声分析与建模

2022 IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2022-12-11 DOI:10.1109/ICEE56203.2022.10118175

Abhishek Kumar, G. Pahwa, A. Behera, A. Bulusu, S. Mehrotra, A. Dasgupta

{"title":"铁电finfet闪烁噪声分析与建模","authors":"Abhishek Kumar, G. Pahwa, A. Behera, A. Bulusu, S. Mehrotra, A. Dasgupta","doi":"10.1109/ICEE56203.2022.10118175","DOIUrl":null,"url":null,"abstract":"This paper presents an in-depth analysis of the flicker noise (1/f noise) in Field Effect Transistors (FETs) with ferroelectric gate stack. The analysis is valid for all ferroelectric FETs (FeFETs). We have also proposed an enhancement to industry standard flicker noise models to take ferroelectric thickness into account.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs\",\"authors\":\"Abhishek Kumar, G. Pahwa, A. Behera, A. Bulusu, S. Mehrotra, A. Dasgupta\",\"doi\":\"10.1109/ICEE56203.2022.10118175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an in-depth analysis of the flicker noise (1/f noise) in Field Effect Transistors (FETs) with ferroelectric gate stack. The analysis is valid for all ferroelectric FETs (FeFETs). We have also proposed an enhancement to industry standard flicker noise models to take ferroelectric thickness into account.\",\"PeriodicalId\":281727,\"journal\":{\"name\":\"2022 IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEE56203.2022.10118175\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10118175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文对具有铁电栅极叠加的场效应晶体管中的闪烁噪声(1/f噪声)进行了深入的分析。该分析适用于所有铁电场效应管(fefet)。我们还提出了对工业标准闪烁噪声模型的改进，以考虑铁电厚度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs

This paper presents an in-depth analysis of the flicker noise (1/f noise) in Field Effect Transistors (FETs) with ferroelectric gate stack. The analysis is valid for all ferroelectric FETs (FeFETs). We have also proposed an enhancement to industry standard flicker noise models to take ferroelectric thickness into account.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE International Conference on Emerging Electronics (ICEE)

自引率

0.00%

发文量